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Characterization of single -electron tunneling transistor
Abstract
Normal-Superconductor-Superconductor (NSS) single-electron tunneling (SET) transistors were studied. A hysteresis in the current versus gate voltage curve was found in a SET transistor and SET trap hybrid system. This hybrid system can be used as a new type of memory cell in electronics. The inferred junction capacitance, as extracted from the nonlinear current-voltage characteristics, was measured as a function of magnetic field and temperature. Noise issue in SET transistor was studied as well.
Subject Area
Condensation
Recommended Citation
Jiang, Chong, "Characterization of single -electron tunneling transistor" (2000). Doctoral Dissertations Available from Proquest. AAI9978511.
https://scholarworks.umass.edu/dissertations/AAI9978511