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Characterization of single-electron tunneling transistor
Normal-Superconductor-Superconductor (NSS) single-electron tunneling (SET) transistors were studied. A hysteresis in the current versus gate voltage curve was found in a SET transistor and SET trap hybrid system. This hybrid system can be used as a new type of memory cell in electronics. The inferred junction capacitance, as extracted from the nonlinear current-voltage characteristics, was measured as a function of magnetic field and temperature. Noise issue in SET transistor was studied as well. ^
Physics, Condensed Matter
"Characterization of single-electron tunneling transistor"
(January 1, 2000).
Electronic Doctoral Dissertations for UMass Amherst.