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Author ORCID Identifier
N/A
AccessType
Open Access Dissertation
Document Type
dissertation
Degree Name
Doctor of Philosophy (PhD)
Degree Program
Electrical and Computer Engineering
Year Degree Awarded
2018
Month Degree Awarded
September
First Advisor
Joseph Bardin
Subject Categories
Electrical and Electronics
Abstract
Cryogenic low noise amplifiers (LNAs) are one of the key components in many emerging applications such as radio astronomy or quantum computing in which a weak incoming signal needs to be read out. There have been extensive studies on the feasibility of leveraging silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs) to implement cryogenic LNAs in the past. The deployment of such LNAs in the future large-scale systems in radio astronomy or quantum computing is contingent upon the possibility of developing LNAs with reduced DC power dissipation to enable the cooling of a large number of array elements inside a cryogenic cooler. In this dissertation, we focus on the cryogenic operation of SiGe HBTs at reduced supply voltages for the implementation of ultra low- power LNAs and their applications for scalable receiver systems. In addition, the limitations of the SiGe HBT cryogenic models for the operation at high current densities are investigated for the implementation of modern high speed SiGe HBT circuits.
DOI
https://doi.org/10.7275/12736298
Recommended Citation
Montazeri, Shirin, "SILICON-GERMANIUM HETEROJUNCTION BIPOLAR TRANSISTORS FOR LARGE-SCALE LOW-POWER CRYOGENIC SENSING SYSTEMS" (2018). Doctoral Dissertations. 1464.
https://doi.org/10.7275/12736298
https://scholarworks.umass.edu/dissertations_2/1464