Publication Date

November 2011

Journal or Book Title

Advanced Materials

Abstract

By employing a precise method for locating and directlyimaging the active switching region in a resistive random access memory (RRAM) device, a nanoscale conducting channel consisting of an amorphous Ta(O) solid solution surrounded by nearly stoichiometric Ta2O5 is observed. Structural and chemical analysis of the channel combined with temperature-dependent transport measurements indicate a unique resistance switching mechanism.

DOI

10.1002/adma.201103379

Volume

23

Issue

47

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