Journal or Book Title
By employing a precise method for locating and directlyimaging the active switching region in a resistive random access memory (RRAM) device, a nanoscale conducting channel consisting of an amorphous Ta(O) solid solution surrounded by nearly stoichiometric Ta2O5 is observed. Structural and chemical analysis of the channel combined with temperature-dependent transport measurements indicate a unique resistance switching mechanism.
Miao, Feng; Strachan, John; Yang, Jianhua; Zhang, M; Goldfarb, Ilan; Torrezan, Antonio; Eschbach, Peter; Kelley, Ronald; Medeiros-Ribeiro, Gilberto; and Williams, R Stanley, "Anatomy of a Nanoscale Conduction Channel Reveals the Mechanism of a High-Performance Memristor" (2011). Advanced Materials. 1177.