High switching endurance in TaO_x memristive devices

Authors

Jianhua Yang, University of Massachusetts - AmherstFollow
M Zhang
John Strachan
Feng Miao
Matthew Pickett
Ronald Kelley

Publication Date

December 2010

Journal or Book Title

Applied Physics Letters

Abstract

We demonstrate over 1×1010 open-loop switching cycles from a simple memristive device stack of Pt/TaO��/Ta. We compare this system to a similar device stack based on titanium oxides to obtain insight into the solid-state thermodynamic and kinetic factors that influence endurance in metal-oxide memristors.

DOI

https://doi.org/10.1063/1.3524521

Volume

97

Issue

23

Recommended Citation

Yang, Jianhua; Zhang, M; Strachan, John; Miao, Feng; Pickett, Matthew; and Kelley, Ronald, "High switching endurance in TaO_x memristive devices" (2010). Applied Physics Letters. 1179.
https://doi.org/10.1063/1.3524521