"Scaling MOSFETs to 10 nm: Coulomb Effects, Source Starvation, and Virt" by MV Fischetti, S Jin et al.

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Electrical and Computer Engineering Faculty Publication Series

Title

Scaling MOSFETs to 10 nm: Coulomb Effects, Source Starvation, and Virtual Source

Authors

MV Fischetti
S Jin
TW Tang
P Asbeck
Y Taur
SE Laux
N Sano

Publication Date

2009

Pages

111-116

Journal Title

IWCE-13: 2009 13TH INTERNATIONAL WORKSHOP ON COMPUTATIONAL ELECTRONICS

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