"Physical modeling of strain-dependent hole mobility in Ge p-channel in" by Y Zhang, MV Fischetti et al.

Electrical and Computer Engineering Faculty Publication Series

Physical modeling of strain-dependent hole mobility in Ge p-channel inversion layers

Y Zhang
MV Fischetti
B Soree
W Magnus
M Heyns
M Meuris

2009

106

JOURNAL OF APPLIED PHYSICS

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