Physical modeling of strain-dependent hole mobility in Ge p-channel inversion layers

Authors

Y Zhang
MV Fischetti
B Soree
W Magnus
M Heyns
M Meuris

Publication Date

2009

Journal or Book Title

JOURNAL OF APPLIED PHYSICS

DOI

https://doi.org/10.1063/1.3245327

Pages

-

Volume

106

Issue

8

Recommended Citation

Zhang, Y; Fischetti, MV; Soree, B; Magnus, W; Heyns, M; and Meuris, M, "Physical modeling of strain-dependent hole mobility in Ge p-channel inversion layers" (2009). JOURNAL OF APPLIED PHYSICS. 237.
https://doi.org/10.1063/1.3245327