Simulation of electron transport in high-mobility MOSFETs: Density of states bottleneck and source starvation

Authors

MV Fischetti
L Wang
B Yu
C Sachs
PM Asbeck
Y Taur
M Rodwell

Publication Date

2007

Journal or Book Title

2007 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, VOLS 1 AND 2

DOI

https://doi.org/10.1109/IEDM.2007.4418876

Pages

109-112

Book Series Title

International Electron Devices Meeting

Recommended Citation

Fischetti, MV; Wang, L; Yu, B; Sachs, C; Asbeck, PM; Taur, Y; and Rodwell, M, "Simulation of electron transport in high-mobility MOSFETs: Density of states bottleneck and source starvation" (2007). 2007 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, VOLS 1 AND 2. 239.
https://doi.org/10.1109/IEDM.2007.4418876