Simulation of silicon nanowire transistors using Boltzmann transport equation under relaxation time approximation
Publication Date
2008
Journal or Book Title
IEEE TRANSACTIONS ON ELECTRON DEVICES
DOI
https://doi.org/10.1109/TED.2007.913560
Pages
727-736
Volume
55
Issue
3
Recommended Citation
Jin, S; Tang, TW; and Fischetti, MV, "Simulation of silicon nanowire transistors using Boltzmann transport equation under relaxation time approximation" (2008). IEEE TRANSACTIONS ON ELECTRON DEVICES. 241.
https://doi.org/10.1109/TED.2007.913560
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