Modeling of electron mobility in gated silicon nanowires at room temperature: Surface roughness scattering, dielectric screening, and band nonparabolicity
Publication Date
2007
Journal or Book Title
JOURNAL OF APPLIED PHYSICS
DOI
https://doi.org/10.1109/TED.2007.902712
Pages
-
Volume
102
Issue
8
Recommended Citation
Jin, SH; Fischetti, MV; and Tang, TW, "Modeling of electron mobility in gated silicon nanowires at room temperature: Surface roughness scattering, dielectric screening, and band nonparabolicity" (2007). JOURNAL OF APPLIED PHYSICS. 244.
https://doi.org/10.1109/TED.2007.902712
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