Theoretical study of some physical aspects of electronic transport in nMOSFETs at the 10-nm gate-length
Journal or Book Title
IEEE TRANSACTIONS ON ELECTRON DEVICES
Fischetti, MV; O'Regan, TP; Narayanan, S; Sachs, C; Jin, S; Kim, J; and Zhang, Y, "Theoretical study of some physical aspects of electronic transport in nMOSFETs at the 10-nm gate-length" (2007). Electrical and Computer Engineering Faculty Publication Series. 245.
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