Document Type

Open Access Thesis

Degree Program

Electrical & Computer Engineering

Degree Type

Master of Science in Electrical and Computer Engineering (M.S.E.C.E.)

Year Degree Awarded

2014

Month Degree Awarded

September

Advisor Name

Joseph

Advisor Middle Initial

Cheney

Advisor Last Name

Bardin

Abstract

The performance of III-V heterojunction bipolar transistors (HBTs) has improved significantly over the past two decades. Today’s state of the art Indium Phosphide (InP) HBTs have a maximum frequency of oscillation greater than 800 GHz and have been used to realize an amplifier operating above 600 GHz . In comparison to silicon (Si) based devices, III-V HBTs have superior transport properties that enables a higher gain, higher speed, and noise performance, and much higher Johnson figure- of-merit . From this perspective, the InP HBT is one of the most promising candidates for high performance mixed signal electronic systems.