Combined effects of substrate compliance and film compositional grading on strain relaxation in layer-by-layer semiconductor heteroepitaxy: the case of InAs/In0.50Ga0.50As/GaAs(111)A
Publication Date
2003
Journal or Book Title
SURFACE SCIENCE
Pages
363-378
Volume
540
Issue
2-3
Recommended Citation
Zepeda-Ruiz, LA; Weinberg, WH; and Maroudas, D, "Combined effects of substrate compliance and film compositional grading on strain relaxation in layer-by-layer semiconductor heteroepitaxy: the case of InAs/In0.50Ga0.50As/GaAs(111)A" (2003). SURFACE SCIENCE. 373.
Retrieved from https://scholarworks.umass.edu/che_faculty_pubs/373
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