Off-campus UMass Amherst users: To download dissertations, please use the following link to log into our proxy server with your UMass Amherst user name and password.
Non-UMass Amherst users, please click the view more button below to purchase a copy of this dissertation from Proquest.
(Some titles may also be available free of charge in our Open Access Dissertation Collection, so please check there first.)
Characterization of single -electron tunneling transistor
Normal-Superconductor-Superconductor (NSS) single-electron tunneling (SET) transistors were studied. A hysteresis in the current versus gate voltage curve was found in a SET transistor and SET trap hybrid system. This hybrid system can be used as a new type of memory cell in electronics. The inferred junction capacitance, as extracted from the nonlinear current-voltage characteristics, was measured as a function of magnetic field and temperature. Noise issue in SET transistor was studied as well.
Jiang, Chong, "Characterization of single -electron tunneling transistor" (2000). Doctoral Dissertations Available from Proquest. AAI9978511.