Off-campus UMass Amherst users: To download campus access dissertations, please use the following link to log into our proxy server with your UMass Amherst user name and password.
Non-UMass Amherst users: Please talk to your librarian about requesting this dissertation through interlibrary loan.
Dissertations that have an embargo placed on them will not be available to anyone until the embargo expires.
Author ORCID Identifier
Open Access Dissertation
Doctor of Philosophy (PhD)
Electrical and Computer Engineering
Year Degree Awarded
Month Degree Awarded
Electrical and Electronics
Cryogenic low noise amplifiers (LNAs) are one of the key components in many emerging applications such as radio astronomy or quantum computing in which a weak incoming signal needs to be read out. There have been extensive studies on the feasibility of leveraging silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs) to implement cryogenic LNAs in the past. The deployment of such LNAs in the future large-scale systems in radio astronomy or quantum computing is contingent upon the possibility of developing LNAs with reduced DC power dissipation to enable the cooling of a large number of array elements inside a cryogenic cooler. In this dissertation, we focus on the cryogenic operation of SiGe HBTs at reduced supply voltages for the implementation of ultra low- power LNAs and their applications for scalable receiver systems. In addition, the limitations of the SiGe HBT cryogenic models for the operation at high current densities are investigated for the implementation of modern high speed SiGe HBT circuits.
Montazeri, Shirin, "SILICON-GERMANIUM HETEROJUNCTION BIPOLAR TRANSISTORS FOR LARGE-SCALE LOW-POWER CRYOGENIC SENSING SYSTEMS" (2018). Doctoral Dissertations. 1464.