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Author ORCID Identifier
https://orcid.org/0000-0002-7640-9596
AccessType
Open Access Dissertation
Document Type
dissertation
Degree Name
Doctor of Philosophy (PhD)
Degree Program
Electrical and Computer Engineering
Year Degree Awarded
2022
Month Degree Awarded
February
First Advisor
Joseph Bardin
Subject Categories
Electrical and Electronics
Abstract
This dissertation is focused on an investigation of BiCMOS cryogenic low noise amplifiers (LNAs) based on Silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs) for simultaneous low noise and low power design and also taking advantage of CMOS circuitry for adding flexibility to the LNA design. Cryogenic LNAs' scalability challenges are discussed and addressed in the dissertation. To achieve that, first, HBTs of three state-of-the-art technologies are characterized and modeled at cryogenic temperature. It is shown that SiGe HBT provides a promising compromise of noise temperature, power consumption, and bandwidth. Moreover, a scalable on-chip approach is proposed and verified for biasing of SiGe HBTs based LNAs. Finally, the first cryogenic re-configurable LNA is designed, implemented, and measured.
DOI
https://doi.org/10.7275/27245161
Recommended Citation
Hosseini, Mohsen, "Silicon Germanium BiCMOS Integrated Circuits for Scalable Cryogenic Sensing Applications" (2022). Doctoral Dissertations. 2406.
https://doi.org/10.7275/27245161
https://scholarworks.umass.edu/dissertations_2/2406
Creative Commons License
This work is licensed under a Creative Commons Attribution 4.0 License.