OPTIMIZED TIGHT-BINDING VALENCE BANDS AND HETEROJUNCTION OFFSETS IN STRAINED III-V SEMICONDUCTORS
Publication Date
1991
Journal or Book Title
JOURNAL OF APPLIED PHYSICS
DOI
https://doi.org/10.1063/1.349115
Pages
4342-4356
Volume
70
Issue
8
Recommended Citation
Anderson, NG and JONES, SD, "OPTIMIZED TIGHT-BINDING VALENCE BANDS AND HETEROJUNCTION OFFSETS IN STRAINED III-V SEMICONDUCTORS" (1991). JOURNAL OF APPLIED PHYSICS. 107.
https://doi.org/10.1063/1.349115
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