Publication Date
July 2010
Journal or Book Title
Advanced Materials
Abstract
Thermal diffusion of Ti through Pt electrode forms Ti atom channels of 1 nm diameter along Pt grain boundaries, seeding switching centers and controlling nanoscale memristive switching. The image shows EFTEM maps of Ti overlaid on HRTEM images for a Si/SiO2 100 nm/Ti 5nm/Pt 15 nm sample in-situ annealed in ultrahigh vacuum at 250 °C for 1 hour.
DOI
https://doi.org/10.1002/adma.201000663
Volume
22
Issue
36
Recommended Citation
Yang, Jianhua; Strachan, John; Xia, Qiangfei; Ohlberg, Douglas; Kuekes, Philip; Kelley, Ronald; Stickle, William; Stewart, Duncan; Medeiros-Ribeiro,, Gilberto; and Williams, R Stanley, "Diffusion of Adhesion Layer Metals Controls Nanoscale Memristive Switching" (2010). Advanced Materials. 1178.
https://doi.org/10.1002/adma.201000663