Journal or Book Title
Applied Physics Letters
We demonstrate over 1×1010 open-loop switching cycles from a simple memristive device stack of Pt/TaO��/Ta. We compare this system to a similar device stack based on titanium oxides to obtain insight into the solid-state thermodynamic and kinetic factors that influence endurance in metal-oxide memristors.
Yang, Jianhua; Zhang, M; Strachan, John; Miao, Feng; Pickett, Matthew; and Kelley, Ronald, "High switching endurance in TaOx memristive devices" (2010). Applied Physics Letters. 1179.