Electronic band structure calculations for biaxially strained Si, Ge, and III-V semiconductors

Authors

J Kim
MV Fischetti

Publication Date

2010

Journal or Book Title

JOURNAL OF APPLIED PHYSICS

DOI

https://doi.org/10.1063/1.3437655

Pages

-

Volume

108

Issue

1

Recommended Citation

Kim, J and Fischetti, MV, "Electronic band structure calculations for biaxially strained Si, Ge, and III-V semiconductors" (2010). JOURNAL OF APPLIED PHYSICS. 231.
https://doi.org/10.1063/1.3437655