Scaling MOSFETs to 10 nm: Coulomb Effects, Source Starvation, and Virtual Source

Authors

MV Fischetti
S Jin
TW Tang
P Asbeck
Y Taur
SE Laux
N Sano

Publication Date

2009

Journal or Book Title

IWCE-13: 2009 13TH INTERNATIONAL WORKSHOP ON COMPUTATIONAL ELECTRONICS

DOI

https://doi.org/10.1109/IWCE.2009.5091145

Pages

111-116

Recommended Citation

Fischetti, MV; Jin, S; Tang, TW; Asbeck, P; Taur, Y; Laux, SE; and Sano, N, "Scaling MOSFETs to 10 nm: Coulomb Effects, Source Starvation, and Virtual Source" (2009). IWCE-13: 2009 13TH INTERNATIONAL WORKSHOP ON COMPUTATIONAL ELECTRONICS. 235.
https://doi.org/10.1109/IWCE.2009.5091145