Physical modeling of strain-dependent hole mobility in Ge p-channel inversion layers
Publication Date
2009
Journal or Book Title
JOURNAL OF APPLIED PHYSICS
DOI
https://doi.org/10.1063/1.3245327
Pages
-
Volume
106
Issue
8
Recommended Citation
Zhang, Y; Fischetti, MV; Soree, B; Magnus, W; Heyns, M; and Meuris, M, "Physical modeling of strain-dependent hole mobility in Ge p-channel inversion layers" (2009). JOURNAL OF APPLIED PHYSICS. 237.
https://doi.org/10.1063/1.3245327
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