Simulation of electron transport in high-mobility MOSFETs: Density of states bottleneck and source starvation
Publication Date
2007
Journal or Book Title
2007 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, VOLS 1 AND 2
DOI
https://doi.org/10.1109/IEDM.2007.4418876
Pages
109-112
Book Series Title
International Electron Devices Meeting
Recommended Citation
Fischetti, MV; Wang, L; Yu, B; Sachs, C; Asbeck, PM; Taur, Y; and Rodwell, M, "Simulation of electron transport in high-mobility MOSFETs: Density of states bottleneck and source starvation" (2007). 2007 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, VOLS 1 AND 2. 239.
https://doi.org/10.1109/IEDM.2007.4418876