Simulation of silicon nanowire transistors using Boltzmann transport equation under relaxation time approximation

Authors

S Jin
TW Tang
MV Fischetti

Publication Date

2008

Journal or Book Title

IEEE TRANSACTIONS ON ELECTRON DEVICES

DOI

https://doi.org/10.1109/TED.2007.913560

Pages

727-736

Volume

55

Issue

3

Recommended Citation

Jin, S; Tang, TW; and Fischetti, MV, "Simulation of silicon nanowire transistors using Boltzmann transport equation under relaxation time approximation" (2008). IEEE TRANSACTIONS ON ELECTRON DEVICES. 241.
https://doi.org/10.1109/TED.2007.913560