Modeling of electron mobility in gated silicon nanowires at room temperature: Surface roughness scattering, dielectric screening, and band nonparabolicity

Authors

SH Jin
MV Fischetti
TW Tang

Publication Date

2007

Journal or Book Title

JOURNAL OF APPLIED PHYSICS

DOI

https://doi.org/10.1109/TED.2007.902712

Pages

-

Volume

102

Issue

8

Recommended Citation

Jin, SH; Fischetti, MV; and Tang, TW, "Modeling of electron mobility in gated silicon nanowires at room temperature: Surface roughness scattering, dielectric screening, and band nonparabolicity" (2007). JOURNAL OF APPLIED PHYSICS. 244.
https://doi.org/10.1109/TED.2007.902712