This dissertation is focused on an investigation of BiCMOS cryogenic low noise amplifiers (LNAs) based on Silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs) for simultaneous low noise and low power design and also taking advantage of CMOS circuitry for adding flexibility to the LNA design. Cryogenic LNAs' scalability challenges are discussed and addressed in the dissertation. To achieve that, first, HBTs of three state-of-the-art technologies are characterized and modeled at cryogenic temperature. It is shown that SiGe HBT provides a promising compromise of noise temperature, power consumption, and bandwidth. Moreover, a scalable on-chip approach is proposed and verified for biasing of SiGe HBTs based LNAs. Finally, the first cryogenic re-configurable LNA is designed, implemented, and measured.