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ORCID
N/A
Access Type
Open Access Thesis
Document Type
thesis
Degree Program
Electrical & Computer Engineering
Degree Type
Master of Science in Electrical and Computer Engineering (M.S.E.C.E.)
Year Degree Awarded
2014
Month Degree Awarded
September
Abstract
The performance of III-V heterojunction bipolar transistors (HBTs) has improved significantly over the past two decades. Today’s state of the art Indium Phosphide (InP) HBTs have a maximum frequency of oscillation greater than 800 GHz and have been used to realize an amplifier operating above 600 GHz . In comparison to silicon (Si) based devices, III-V HBTs have superior transport properties that enables a higher gain, higher speed, and noise performance, and much higher Johnson figure- of-merit . From this perspective, the InP HBT is one of the most promising candidates for high performance mixed signal electronic systems.
DOI
https://doi.org/10.7275/6050627
First Advisor
Joseph Cheney Bardin
Recommended Citation
ayata, metin, "Millimeter Wave Indium Phosphide Heterojunction Bipolar Transistors: Noise Performance and Circuit Applications" (2014). Masters Theses. 68.
https://doi.org/10.7275/6050627
https://scholarworks.umass.edu/masters_theses_2/68
Included in
Electronic Devices and Semiconductor Manufacturing Commons, Nanotechnology Fabrication Commons, Other Electrical and Computer Engineering Commons