Journal or Book Title
We investigate band-gap tuning of bilayer graphene between hexagonal boron nitride sheets, by external electric fields. Using density functional theory, we show that the gap is continuously tunable from 0 to 0.2 eV, and is robust to stacking disorder. Moreover, boron nitride sheets do not alter the fundamental response from that of free-standing bilayer graphene, apart from additional screening. The calculations suggest that the graphene-boron nitride heterostructures could provide a viable route to graphene-based electronic devices.
Ramasubramaniam, Ashwin; Naveh, Doron; and Towe, ELias, "Tunable band gaps in bilayer graphene-BN heterostructures" (2010). arXiv. 611.
Retrieved from https://scholarworks.umass.edu/mie_faculty_pubs/611