Publication Date

2021

Journal or Book Title

NATURE COMMUNICATIONS

Abstract

The performance of perovskite photovoltaics is fundamentally impeded by the presence of undesirable defects that contribute to non-radiative losses within the devices. Although mitigating these losses has been extensively reported by numerous passivation strategies, a detailed understanding of loss origins within the devices remains elusive. Here, we demonstrate that the defect capturing probability estimated by the capture cross-section is decreased by varying the dielectric response, producing the dielectric screening effect in the perovskite. The resulting perovskites also show reduced surface recombination and a weaker electron-phonon coupling. All of these boost the power conversion efficiency to 22.3% for an inverted perovskite photovoltaic device with a high open-circuit voltage of 1.25 V and a low voltage deficit of 0.37 V (a bandgap similar to 1.62 eV). Our results provide not only an in-depth understanding of the carrier capture processes in perovskites, but also a promising pathway for realizing highly efficient devices via dielectric regulation.

ISSN

2041-1723

ORCID

Yu, Hongyu/0000-0002-5756-868X; ZHANG, WEI/0000-0002-2678-8372; Su, Rui/0000-0002-8861-1222; Luo, Deying/0000-0002-8977-7267

DOI

https://doi.org/10.1038/s41467-021-22783-z

Volume

12

Issue

1

License

UMass Amherst Open Access Policy

Creative Commons License

Creative Commons Attribution 4.0 License
This work is licensed under a Creative Commons Attribution 4.0 License.

Funder

National Natural Science Foundation of ChinaNational Natural Science Foundation of China (NSFC) [61722501]; EPSRC New Investigator AwardUK Research & Innovation (UKRI)Engineering & Physical Sciences Research Council (EPSRC) [EP/R043272/1]; DOE, Office of Science, and Office of Basic Energy SciencesUnited States Department of Energy (DOE); Office of Science, Office of Basic Energy SciencesUnited States Department of Energy (DOE); US Department of EnergyUnited States Department of Energy (DOE) [DE-AC02-05CH11231]; Research and Application of Key Technologies of GaN-based Power Devices on Si Substrate [2019B010128001]; Research on key technologies for optimization of IoT chips and product development [2019B010142001]; Research of AlGaN HEMT MEMS sensor for work in extreme environment [JCYJ20170412153356899]; Postdoctoral Innovative Talents Support Project from the China Postdoctoral Science Foundation [BX20190018]; US Office of Naval ResearchOffice of Naval Research [N00014-12-1-0413]

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