Microstructure analysis of epitaxially grown self-assembled Ge islands on nanometer-scale patterned SiO2/Si substrates by high-resolution transmission electron microscopy

Authors

TS Yoon
HM Kim
KB Kim
DY Ryu
TP Russell
Z Zhao
J Liu
YH Xie

Publication Date

2007

Journal or Book Title

JOURNAL OF APPLIED PHYSICS

Pages

-

Volume

102

Issue

10

Recommended Citation

Yoon, TS; Kim, HM; Kim, KB; Ryu, DY; Russell, TP; Zhao, Z; Liu, J; and Xie, YH, "Microstructure analysis of epitaxially grown self-assembled Ge islands on nanometer-scale patterned SiO2/Si substrates by high-resolution transmission electron microscopy" (2007). JOURNAL OF APPLIED PHYSICS. 916.
Retrieved from https://scholarworks.umass.edu/pse_faculty_pubs/916