Fischetti, MVJin, STang, TWAsbeck, PTaur, YLaux, SESano, N2024-04-262024-04-262009-0110.1109/IWCE.2009.5091145https://hdl.handle.net/20.500.14394/21019Scaling MOSFETs to 10 nm: Coulomb Effects, Source Starvation, and Virtual Sourcearticle