Miao, FengStrachan, JohnYang, JianhuaZhang, MGoldfarb, IlanTorrezan, AntonioEschbach, PeterKelley, RonaldMedeiros-Ribeiro, GilbertoWilliams, R Stanley2024-04-262024-04-262011-11-0810.1002/adma.201103379https://hdl.handle.net/20.500.14394/20861By employing a precise method for locating and directlyimaging the active switching region in a resistive random access memory (RRAM) device, a nanoscale conducting channel consisting of an amorphous Ta(O) solid solution surrounded by nearly stoichiometric Ta2O5 is observed. Structural and chemical analysis of the channel combined with temperature-dependent transport measurements indicate a unique resistance switching mechanism.nanoscale conductionhigh performance memristorElectrical and Computer EngineeringEngineeringarticle