On estimating impact of loading effect on leakage current in sub-65nm scaled CMOS circuits based on Newton-Raphson method

Rastogi, AChen, WKundu, S2024-04-262024-04-262007-0110.1145/1278480.1278658https://hdl.handle.net/20.500.14394/21606sub-threshold leakage, gate leakage, band-to-band tunneling leakage, loading effect, Newton Raphson method,On estimating impact of loading effect on leakage current in sub-65nm scaled CMOS circuits based on Newton-Raphson methodarticle