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Access Type

Open Access

Document Type


Degree Program

Electrical & Computer Engineering

Degree Type

Master of Science in Electrical and Computer Engineering (M.S.E.C.E.)

Year Degree Awarded


Month Degree Awarded



Quantum Transport, Pauli Master Equation, n-i-n, RTD, DGFET


On the way to develop a complete full-band quantum transport simulation using the Pauli Master Equation, we show our present results on 1D n-i-n resistors, 1D double barrier resonant tunneling diodes (DBRTD), and 2D double-gate field effect transistors (DGFETs) using a simplified parabolic, spherical effective-mass band-structure model accounting for nonpolar scattering with acoustic (elastic) and optical (inelastic) silicon-like phonons. We also consider the effect of point-like dopants on the access resistance of thin-body double gate devices.


First Advisor

Massimo V Fischetti