Off-campus UMass Amherst users: To download campus access theses, please use the following link to log into our proxy server with your UMass Amherst user name and password.

Non-UMass Amherst users: Please talk to your librarian about requesting this thesis through interlibrary loan.

Theses that have an embargo placed on them will not be available to anyone until the embargo expires.

Document Type

Open Access

Degree Program

Electrical & Computer Engineering

Degree Type

Master of Science in Electrical and Computer Engineering (M.S.E.C.E.)

Year Degree Awarded

2009

Month Degree Awarded

September

Keywords

Quantum Transport, Pauli Master Equation, n-i-n, RTD, DGFET

Abstract

On the way to develop a complete full-band quantum transport simulation using the Pauli Master Equation, we show our present results on 1D n-i-n resistors, 1D double barrier resonant tunneling diodes (DBRTD), and 2D double-gate field effect transistors (DGFETs) using a simplified parabolic, spherical effective-mass band-structure model accounting for nonpolar scattering with acoustic (elastic) and optical (inelastic) silicon-like phonons. We also consider the effect of point-like dopants on the access resistance of thin-body double gate devices.

First Advisor

Massimo V Fischetti

Share

COinS