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Access Type
Open Access
Document Type
thesis
Degree Program
Electrical & Computer Engineering
Degree Type
Master of Science in Electrical and Computer Engineering (M.S.E.C.E.)
Year Degree Awarded
2009
Month Degree Awarded
September
Keywords
Quantum Transport, Pauli Master Equation, n-i-n, RTD, DGFET
Abstract
On the way to develop a complete full-band quantum transport simulation using the Pauli Master Equation, we show our present results on 1D n-i-n resistors, 1D double barrier resonant tunneling diodes (DBRTD), and 2D double-gate field effect transistors (DGFETs) using a simplified parabolic, spherical effective-mass band-structure model accounting for nonpolar scattering with acoustic (elastic) and optical (inelastic) silicon-like phonons. We also consider the effect of point-like dopants on the access resistance of thin-body double gate devices.
DOI
https://doi.org/10.7275/926832
First Advisor
Massimo V Fischetti