Theoretical study of some physical aspects of electronic transport in nMOSFETs at the 10-nm gate-length

Authors

MV Fischetti
TP O'Regan
S Narayanan
C Sachs
S Jin
J Kim
Y Zhang

Publication Date

2007

Journal or Book Title

IEEE TRANSACTIONS ON ELECTRON DEVICES

DOI

https://doi.org/10.1109/TED.2007.902722

Pages

2116-2136

Volume

54

Issue

9

Recommended Citation

Fischetti, MV; O'Regan, TP; Narayanan, S; Sachs, C; Jin, S; Kim, J; and Zhang, Y, "Theoretical study of some physical aspects of electronic transport in nMOSFETs at the 10-nm gate-length" (2007). IEEE TRANSACTIONS ON ELECTRON DEVICES. 245.
https://doi.org/10.1109/TED.2007.902722