Remote phonon scattering in Si and Ge with SiO2 and HfO2 insulators: Does the electron mobility determine short channel performance?

Authors

T O'Regan
M Fischetti

Publication Date

2007

Journal or Book Title

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS

Pages

3265-3272

Volume

46

Issue

5B

Recommended Citation

O'Regan, T and Fischetti, M, "Remote phonon scattering in Si and Ge with SiO2 and HfO2 insulators: Does the electron mobility determine short channel performance?" (2007). JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS. 247.
Retrieved from https://scholarworks.umass.edu/ece_faculty_pubs/247