Title
Scaling MOSFETs to 10 nm: Coulomb Effects, Source Starvation, and Virtual Source
Publication Date
2009
Journal or Book Title
IWCE-13: 2009 13TH INTERNATIONAL WORKSHOP ON COMPUTATIONAL ELECTRONICS
DOI
https://doi.org/10.1109/IWCE.2009.5091145
Pages
111-116
Recommended Citation
Fischetti, MV; Jin, S; Tang, TW; Asbeck, P; Taur, Y; Laux, SE; and Sano, N, "Scaling MOSFETs to 10 nm: Coulomb Effects, Source Starvation, and Virtual Source" (2009). IWCE-13: 2009 13TH INTERNATIONAL WORKSHOP ON COMPUTATIONAL ELECTRONICS. 235.
https://doi.org/10.1109/IWCE.2009.5091145