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Millimeter Wave Indium Phosphide Heterojunction Bipolar Transistors: Noise Performance and Circuit Applications

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dc.contributor.advisorJoseph Cheney Bardin
dc.contributor.authorayata, metin
dc.contributor.departmentUniversity of Massachusetts Amherst
dc.contributor.departmentElectrical & Computer Engineering
dc.date2024-03-28T19:34:19.000
dc.date.accessioned2024-04-26T18:24:57Z
dc.date.available2024-04-26T18:24:57Z
dc.date.submittedSeptember
dc.date.submitted2014
dc.description.abstractThe performance of III-V heterojunction bipolar transistors (HBTs) has improved significantly over the past two decades. Today’s state of the art Indium Phosphide (InP) HBTs have a maximum frequency of oscillation greater than 800 GHz and have been used to realize an amplifier operating above 600 GHz . In comparison to silicon (Si) based devices, III-V HBTs have superior transport properties that enables a higher gain, higher speed, and noise performance, and much higher Johnson figure- of-merit . From this perspective, the InP HBT is one of the most promising candidates for high performance mixed signal electronic systems.
dc.description.degreeMaster of Science in Electrical and Computer Engineering (M.S.E.C.E.)
dc.identifier.doihttps://doi.org/10.7275/6050627
dc.identifier.orcidN/A
dc.identifier.urihttps://hdl.handle.net/20.500.14394/33720
dc.relation.urlhttps://scholarworks.umass.edu/cgi/viewcontent.cgi?article=1125&context=masters_theses_2&unstamped=1
dc.source.statuspublished
dc.subjectInP
dc.subjectHBT
dc.subjectLNA
dc.subjectModelling
dc.subjectTransistor
dc.subjectSmall-signal modelling
dc.subjectElectronic Devices and Semiconductor Manufacturing
dc.subjectNanotechnology Fabrication
dc.subjectOther Electrical and Computer Engineering
dc.titleMillimeter Wave Indium Phosphide Heterojunction Bipolar Transistors: Noise Performance and Circuit Applications
dc.typeopenaccess
dc.typearticle
dc.typethesis
digcom.contributor.authorisAuthorOfPublication|email:ayatametin@gmail.com|institution:University of Massachusetts Amherst|ayata, metin
digcom.identifiermasters_theses_2/68
digcom.identifier.contextkey6050627
digcom.identifier.submissionpathmasters_theses_2/68
dspace.entity.typePublication
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