Document Type

Open Access Thesis

Degree Program

Electrical & Computer Engineering

Degree Type

Master of Science in Electrical and Computer Engineering (M.S.E.C.E.)

Year Degree Awarded

2014

Month Degree Awarded

September

Abstract

The performance of III-V heterojunction bipolar transistors (HBTs) has improved significantly over the past two decades. Today’s state of the art Indium Phosphide (InP) HBTs have a maximum frequency of oscillation greater than 800 GHz and have been used to realize an amplifier operating above 600 GHz . In comparison to silicon (Si) based devices, III-V HBTs have superior transport properties that enables a higher gain, higher speed, and noise performance, and much higher Johnson figure- of-merit . From this perspective, the InP HBT is one of the most promising candidates for high performance mixed signal electronic systems.

First Advisor

Joseph Cheney Bardin

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