Ferroelectric non-volatile memories have gained momentous importance in the recent years. Significant research is being done on different device structures with several ferroelectric films for better data retention, lower power dissipation and higher density of integration. Metal - ferroelectric insulator – semiconductor (MIS) capacitor structures with Poly Vinylidene Fluoride(80%) - trifluoroethylene (20%) (PVDF – TrFE) copolymer are observed to demonstrate consistent dielectric properties and retainable memory action under selected operating conditions. Prior research was done on devices with MFeOS structure with an oxide buffer layer. The presence of a buffer oxide reduces the field acting on the film for memory state switching, which in effect requires the devices to be operated at higher voltages. In this work, MFeS devices with lower ferroelectric film thickness; with, and without a very thin buffer oxide have been studied. The dielectric behavior of PVDF thin film, when deposited directly on Si, is observed to exhibit reliable memory properties without significant charge injection under certain operating conditions. Electrical characteristics such as capacitance-voltage(C-V) and polarization-electric field (P-E) hysteresis with the direction of measurement and conduction properties through the junction have been comprehensively studied to establish the behavior of the MIS device for possible use in MIS FETs for high density ferroelectric memories.